Sub-microscopic transient lens spectroscopy of InGaN/GaN quantum wells
نویسندگان
چکیده
Transient lens (TL) spectroscopy was developed with sub-micrometer spatial resolution to observe the temporal and special behavior of the nonradiative processes of carrier dynamics in InGaN/GaN quantum wells (QW). We have observed the carrier density dynamics and the thermal dynamics in the TL signals with a nanosecond pulsed laser. We have also observed TL and photoluminescence (PL) signals by using near-field scanning optical microscopy (NSOM), and find that both PL and TL images are correlated and exhibit submicron scale spatial inhomogeneity.
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تاریخ انتشار 2003